Investigation of indium nitride for micro-nanotechnology
Identifieur interne : 001932 ( Main/Repository ); précédent : 001931; suivant : 001933Investigation of indium nitride for micro-nanotechnology
Auteurs : RBID : Pascal:13-0058050Descripteurs français
- Pascal (Inist)
- Nitrure d'indium, Composé III-V, Nanotechnologie, Dopage, Couche épitaxique, Dépôt chimique phase vapeur, Méthode MOCVD, Microscopie électronique balayage, Dépendance température, Photoluminescence, Résolution temporelle, Spectre résolution temporelle, Cristal hexagonal, Microstructure, Structure basaltique, Bande interdite, Durée vie porteur charge, Couche tampon, Semiconducteur III-V, Indice réfraction, Propriété optique, Substrat saphir, Substrat métal, GaN, 8115G, 7867, 6865.
- Wicri :
- concept : Nanotechnologie, Dopage.
English descriptors
- KwdEn :
- Buffer layer, CVD, Carrier lifetime, Columnar structure, Doping, Energy gap, Epitaxial layers, Hexagonal crystals, III-V compound, III-V semiconductors, Indium nitride, MOCVD, Microstructure, Nanotechnology, Optical properties, Photoluminescence, Refractive index, Scanning electron microscopy, Temperature dependence, Time resolution, Time resolved spectra.
Abstract
We present a study of non-intentionally doped InN epilayers directly grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) technique. Structural and optical characterisations of this sample have been conducted by SEM, temperature-dependent photoluminescence and time resolved pump-probe techniques. Triangular-shaped structures of InN are observed to grow above hexagonal-shaped columnar structures as seen from the SEM image. Photoluminescence spectra reveal a peak energy of 0.75 eV, supporting the existence of the narrow bandgap of InN. So far, various papers in the literature quote the carrier lifetime in InN epilayers grown on sapphire substrate in the presence of a buffer layer such as GaN. Herein, we report carrier lifetime measurements conducted on InN epilayer deposited directly on sapphire substrate, in the absence of GaN as a buffer layer.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of indium nitride for micro-nanotechnology</title><author><name sortKey="Gokarna, A" uniqKey="Gokarna A">A. Gokarna</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Electronics, Microelectronics and Nanotechnology, UMR-8520, Avenue Poincare</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Lampin, J F" uniqKey="Lampin J">J. F. Lampin</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Electronics, Microelectronics and Nanotechnology, UMR-8520, Avenue Poincare</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Vignaud, D" uniqKey="Vignaud D">D. Vignaud</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Electronics, Microelectronics and Nanotechnology, UMR-8520, Avenue Poincare</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Dogheche, E" uniqKey="Dogheche E">E. Dogheche</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Electronics, Microelectronics and Nanotechnology, UMR-8520, Avenue Poincare</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Decoster, D" uniqKey="Decoster D">D. Decoster</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute of Electronics, Microelectronics and Nanotechnology, UMR-8520, Avenue Poincare</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Ruffenach, S" uniqKey="Ruffenach S">S. Ruffenach</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Universite Montpellier 2, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CNRS, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Briot, O" uniqKey="Briot O">O. Briot</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Universite Montpellier 2, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CNRS, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Moret, M" uniqKey="Moret M">M. Moret</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Universite Montpellier 2, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CNRS, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0058050</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 13-0058050 INIST</idno><idno type="RBID">Pascal:13-0058050</idno><idno type="wicri:Area/Main/Corpus">001320</idno><idno type="wicri:Area/Main/Repository">001932</idno></publicationStmt><seriesStmt><idno type="ISSN">1475-7435</idno><title level="j" type="abbreviated">Int. j. nanotechnol.</title><title level="j" type="main">International journal of nanotechnology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term><term>CVD</term><term>Carrier lifetime</term><term>Columnar structure</term><term>Doping</term><term>Energy gap</term><term>Epitaxial layers</term><term>Hexagonal crystals</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>MOCVD</term><term>Microstructure</term><term>Nanotechnology</term><term>Optical properties</term><term>Photoluminescence</term><term>Refractive index</term><term>Scanning electron microscopy</term><term>Temperature dependence</term><term>Time resolution</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Nitrure d'indium</term><term>Composé III-V</term><term>Nanotechnologie</term><term>Dopage</term><term>Couche épitaxique</term><term>Dépôt chimique phase vapeur</term><term>Méthode MOCVD</term><term>Microscopie électronique balayage</term><term>Dépendance température</term><term>Photoluminescence</term><term>Résolution temporelle</term><term>Spectre résolution temporelle</term><term>Cristal hexagonal</term><term>Microstructure</term><term>Structure basaltique</term><term>Bande interdite</term><term>Durée vie porteur charge</term><term>Couche tampon</term><term>Semiconducteur III-V</term><term>Indice réfraction</term><term>Propriété optique</term><term>Substrat saphir</term><term>Substrat métal</term><term>GaN</term><term>8115G</term><term>7867</term><term>6865</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nanotechnologie</term><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present a study of non-intentionally doped InN epilayers directly grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) technique. Structural and optical characterisations of this sample have been conducted by SEM, temperature-dependent photoluminescence and time resolved pump-probe techniques. Triangular-shaped structures of InN are observed to grow above hexagonal-shaped columnar structures as seen from the SEM image. Photoluminescence spectra reveal a peak energy of 0.75 eV, supporting the existence of the narrow bandgap of InN. So far, various papers in the literature quote the carrier lifetime in InN epilayers grown on sapphire substrate in the presence of a buffer layer such as GaN. Herein, we report carrier lifetime measurements conducted on InN epilayer deposited directly on sapphire substrate, in the absence of GaN as a buffer layer.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1475-7435</s0></fA01><fA03 i2="1"><s0>Int. j. nanotechnol.</s0></fA03><fA05><s2>9</s2></fA05><fA06><s2>10-12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of indium nitride for micro-nanotechnology</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>INTERNATIONAL CONFERENCE-CUM-WORKSHOP ON NANOSCIENCE AND TECHNOLOGY II</s1></fA09><fA11 i1="01" i2="1"><s1>GOKARNA (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>LAMPIN (J. F.)</s1></fA11><fA11 i1="03" i2="1"><s1>VIGNAUD (D.)</s1></fA11><fA11 i1="04" i2="1"><s1>DOGHECHE (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>DECOSTER (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>RUFFENACH (S.)</s1></fA11><fA11 i1="07" i2="1"><s1>BRIOT (O.)</s1></fA11><fA11 i1="08" i2="1"><s1>MORET (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>KANJILAL (D.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SHARMA (Sanjeev K.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SINGH (M. P.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of Electronics, Microelectronics and Nanotechnology, UMR-8520, Avenue Poincare</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Universite Montpellier 2, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>CNRS, Laboratoire Charles Coulomb UMR 5221</s1><s2>34095, Montpellier</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA15 i1="01"><s1>Inter University Accelerator Centre (IUAC), Aruna Asaf Ali Marg</s1><s2>New Delhi 110067</s2><s3>IND</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Ansal Institute of Technology, Sector 55</s1><s2>Gurgaon, Haryana 122003</s2><s3>IND</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Ansal Institute of Technology and Management</s1><s2>Lucknow</s2><s3>IND</s3><sZ>3 aut.</sZ></fA15><fA20><s1>900-906</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27530</s2><s5>354000505425480050</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0058050</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>International journal of nanotechnology</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>We present a study of non-intentionally doped InN epilayers directly grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) technique. Structural and optical characterisations of this sample have been conducted by SEM, temperature-dependent photoluminescence and time resolved pump-probe techniques. Triangular-shaped structures of InN are observed to grow above hexagonal-shaped columnar structures as seen from the SEM image. Photoluminescence spectra reveal a peak energy of 0.75 eV, supporting the existence of the narrow bandgap of InN. So far, various papers in the literature quote the carrier lifetime in InN epilayers grown on sapphire substrate in the presence of a buffer layer such as GaN. Herein, we report carrier lifetime measurements conducted on InN epilayer deposited directly on sapphire substrate, in the absence of GaN as a buffer layer.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Indium nitride</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Nanotechnologie</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Nanotechnology</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Dopage</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Doping</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Doping</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Dépôt chimique phase vapeur</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>CVD</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>MOCVD</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dépendance température</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Résolution temporelle</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Time resolution</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Time resolved spectra</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Cristal hexagonal</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Hexagonal crystals</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Cristal hexagonal</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Microstructure</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Microstructure</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Structure basaltique</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Columnar structure</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Estructura columnar</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Bande interdite</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Energy gap</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Durée vie porteur charge</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Carrier lifetime</s0><s5>31</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Couche tampon</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Buffer layer</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Capa tampón</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>34</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Refractive index</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Propriété optique</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Optical properties</s0><s5>35</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Substrat saphir</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Substrat métal</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>6865</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>035</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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